| PART |
Description |
Maker |
| CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
|
Continental Device India Limited
|
| CFD2375P CFD2375Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
|
Continental Device India Limited
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2N4030 2N4031 2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE.
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE.
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE.
|
Continental Device India Limited
|
| ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314 |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| FDP20AN06A0 FDB20AN06A0 FDB20AN06A0NL FDP20AN06A0N |
60V N-Channel PowerTrench MOSFET 60V, 45A 20mohm 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 60V, 45A, 20m
N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
From old datasheet system
N-Channel PowerTrench㈢ MOSFET 60V, 45A, 20mз
N-Channel PowerTrench? MOSFET 60V, 45A, 20m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| CMBT2484 |
0.225W General Purpose NPN SMD Transistor. 60V Vceo, 0.050A Ic, 250 hFE.
|
Continental Device India Limited
|
| CSC1008Y |
0.800W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 40 - 80 hFE.
|
Continental Device India Limited
|
| CFA1046Y |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CFC2026Y
|
Continental Device India Limited
|
| 2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB
60V/7A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
|
